2SC5058 silicon npn triple diffused planar application character display horizontal deflection output features high speed switching t f 0.3 sec high breakdown voltage v cbo = 1700 v outline 1. base
2. collector
3. emitter to-3pl 1 2 3
2SC5058 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 1700 v collector to emitter voltage v ceo 900 v emitter to base voltage v ebo 6v collector current i c 12 a collector surge current i c(surge) 20 a collector power dissipation p c * 1 150 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 900 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 6vi e = 10 ma, i c = 0 collector to emitter cutoff current i ces 500 a v ce = 1700 v, r be = 0 dc current transfer ratio h fe 35 v ce = 5 v, i c = 1 a collector to emitter saturation voltage v ce(sat) 5 v i c = 10 a, i b = 2.5 a base to emitter saturation voltage v be(sat) 1.5 v i c = 10 a, i b = 2.5 a fall time t f 0.3 sec i cp = 8 a, i b1 = 2 a i b2 ? C3 a, f h = 31.5 khz
2SC5058 3 200
150
100
50
0 collector power dissipation pc (w) 50 100 150 200 case temperature tc ( c) maximum collctor power
dissipation curve 20
15
10
5 0 collector current i (a) 500 1000 1500 2000 collector to emitter voltage v (v) ce c (900v, 3a) 0.5 ma (100v, 20a) for picture tube arcing
ta=25 c maximim safe operaion area 0 510 collector to emitter voltage v (v) ce collector current i (a) c 5 10 tc = 25 c i = 0 b 1.8 a 1.6 a 1.4 a 1.2 a 1.0 a 0.8 a 0.6 a 0.4 a 0.2 a typical output characteristics 2 a
2SC5058 4 0.1 0.2 0.5 1 2 5 10 1 5 2 10 20 50 100 dc current transfer ratio h fe collector current i (a) c 20 dc current transfer ratio vs.
collector current v = 5 v ce tc = ?5 c 25 c 75 c 0.1 0.2 0.5 1 2 5 20 0.05 0.5 1 2 5 collector to emitter saturation voltage ce(sat) 0.2 0.1 v (v) collector current i (a) c 10 i / i = 4 c b collector to emitter saturation voltage
vs. collector current ta = ?5 c 25 c 75 c 0.1 0.2 0.5 1 2 5 10 0.1 0.5 0.2 1 2 5 10 collector current i (a) c 20 base to emitter saturation voltage
v (v) be(sat) i / i = 4 c b tc = ?5 c 25 c 75 c base to emitter saturation voltage
vs. collector current
2SC5058 5 10
8
6
4
2 0 0.1 0.2 0.5 1 2 5 10 base current i (a) b collector to emitter saturation voltage v (v) ce(sat) collector to emitter saturation voltage
vs. base current tc = 25 c 8 a 10 a 12 a i = 6 a c 1.0
0.8
0.6
0.4
0.2 0.8 1.6 2.4 3.2 4.0 0 fall time t ( s) f icp = 8 a
f = 31.5 khz h base current i (a) b1 fall time vs. base current
2SC5058 6 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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